GaNAsSb/GaAs waveguide photodetector with response up to 1.6 μm grown by molecular beam epitaxy

W. K. Loke, S. F. Yoon, Z. Xu, K. H. Tan, Tien Khee Ng, Y. K. Sim, S. Wicaksono, N. Saadsaoud, D. Decoster, J. Chazelas

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7 Scopus citations

Abstract

We present a GaNAsSb/GaAs p-i-n waveguide photodetector operating in the 1.0-1.6 μm wavelength range with enhanced photoresponsivity compared to a top-illuminated photodetector fabricated using the same material system. The device consists of a strained GaNAsSb layer, with N and Sb contents of 3.5% and 18%, respectively, sandwiched between GaAs:Si (n -type) and GaAs:C (p -type) layers. X-ray reciprocal space map of the GaNAsSb layer before device fabrication showed that the film relaxation is ∼1%. At 1.55 μm, photoresponsivities of 0.25 and 0.29 A/W for devices with 6.5 and 10 μm ridge width, respectively, was demonstrated.

Original languageEnglish (US)
Article number081102
JournalApplied Physics Letters
Volume93
Issue number8
DOIs
StatePublished - Sep 15 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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