GaN nanowires synthesized by electroless etching method

A. Najar, A. B. Slimane, D. H. Anjum, T. K. Ng, B. S. Ooi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2012
StatePublished - Dec 1 2012
EventCLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2012
CountryUnited States
CitySan Jose, CA
Period05/6/1205/11/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'GaN nanowires synthesized by electroless etching method'. Together they form a unique fingerprint.

Cite this