GaN nanowires synthesized by electroless etching method

A. Najar*, A. B. Slimane, D. H. Anjum, T. K. Ng, B. S. Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

Original languageEnglish (US)
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2012
StatePublished - 2012
EventQuantum Electronics and Laser Science Conference, QELS 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2012
CountryUnited States
CitySan Jose, CA
Period05/6/1205/11/12

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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