GaN nanowires synthesized by electroless etching method

A. Najar*, A. B. Slimane, D. H. Anjum, T. K. Ng, B. S. Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

Original languageEnglish (US)
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
StatePublished - 2012
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Other

Other2012 Conference on Lasers and Electro-Optics, CLEO 2012
CountryUnited States
CitySan Jose, CA
Period05/6/1205/11/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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