GaN Nanowires Synthesized by Electroless Etching Method

Adel Najar, Dalaver H. Anjum, Tien Khee Ng, Boon S. Ooi, Ahmed Ben Slimane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.
Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics 2012
PublisherThe Optical Society
ISBN (Print)978-1-55752-943-5
DOIs
StatePublished - 2012

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