GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis

A. Hirako, M. Yoshitani, M. Nishibayashi, Y. Nishikawa, Kazuhiro Ohkawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We studied microscopic chemistry of gaseous phase in GaN growth by computational thermodynamic analysis of metalorganic vapor phase epitaxy with two- and three-flow methods. Correlations between quality of GaN layers and gaseous phase chemistry were found from the computational analysis. It was confirmed that laminar flow on a substrate during growth was necessary to obtain a high-quality GaN layer in spite of high growth temperature. Optimum decomposed-species V/III ratio (NH2/GaCH3) were considered in the range of 1000-2000 to achieve high electron mobility more than 200 cm2/Vs. Two-flow method was easier to achieve the optimum condition than three-flow method both in experiments and in computational analysis.

Original languageEnglish (US)
Pages (from-to)931-935
Number of pages5
JournalJournal of Crystal Growth
Volume237-239
Issue number1 4 II
DOIs
StatePublished - Jan 1 2002

Keywords

  • A1. Computre simulation
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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