GaN-based multiple quantum well light-emitting-diodes employing nanotechnology for photon management

Yu Hsuan Hsiao, Meng Lin Tsai, Jr-Hau He

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting-diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white light devices. In this review we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced as well as the fabrication techniques.

Original languageEnglish (US)
Title of host publication2013 IEEE Industry Applications Society Annual Meeting, IAS 2013
DOIs
StatePublished - Dec 1 2013
Event2013 IEEE Industry Applications Society Annual Meeting, IAS 2013 - Lake Buena Vista, FL, United States
Duration: Oct 6 2013Oct 11 2013

Publication series

NameConference Record - IAS Annual Meeting (IEEE Industry Applications Society)
ISSN (Print)0197-2618

Other

Other2013 IEEE Industry Applications Society Annual Meeting, IAS 2013
CountryUnited States
CityLake Buena Vista, FL
Period10/6/1310/11/13

Keywords

  • GaN
  • Light emitting diode
  • multiple quantum well
  • nanostructure

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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