GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

Yu Hsuan Hsiao, Meng-Lin Tsai, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

Abstract

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.
Original languageEnglish (US)
Pages (from-to)1277-1283
Number of pages7
JournalIEEE Transactions on Industry Applications
Volume51
Issue number2
DOIs
StatePublished - Mar 2015

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