GaInNAs QW with GaNAs intermediate layer for long wavelength laser

F. Maskuriy*, M. S. Alias, S. M. Mitani, A. A. Manaf

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T 0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.

Original languageEnglish (US)
Title of host publication2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011
Pages610-613
Number of pages4
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011 - Langkawi, Malaysia
Duration: Sep 25 2011Sep 28 2011

Other

Other2011 IEEE Symposium on Industrial Electronics and Applications, ISIEA 2011
CountryMalaysia
CityLangkawi
Period09/25/1109/28/11

Keywords

  • GaInNAs
  • long wavelength lasers
  • quantum well

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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