Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3μM and 1.55μM

S. Z. Wang*, S. F. Yoon, Tien Khee Ng, W. K. Loke, Z. Z. Sun, K. C. Yew, W. J. Fan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

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Chemical Compounds

Engineering & Materials Science