Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3μM and 1.55μM

S. Z. Wang*, S. F. Yoon, Tien Khee Ng, W. K. Loke, Z. Z. Sun, K. C. Yew, W. J. Fan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Ga(In)AsN is grown by molecular beam epitaxy using either a direct nitrogen beam or dispersive nitrogen radicals generated by a radio-frequency activated nitrogen source. The nitrogen incorporation shows a linear dependence on the RF power in a dispersive growth mode, contrasted to a saturated behavior in a direct growth mode. An additional indium flux causes a decrease in the nitrogen composition, an effect resulting from the increase in the growth rate. Quality Ga(In)AsN quantum wells were grown at 460°C, with a photoluminescence emission close to 1.6μm. Also reported is a PL result amongst the best, as compared with the literature.

Original languageEnglish (US)
Pages (from-to)651-654
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - Jan 1 2002
Event14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden
Duration: May 12 2002May 16 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3μM and 1.55μM'. Together they form a unique fingerprint.

Cite this