Gain and alpha factor of intermixed InAs/InAlGaAs quantum-dash lasers

C. Chen*, Y. Wang, C. L. Tan, H. S. Djie, Boon Ooi, J. C.M. Hwang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We study the optical gain and alpha factor of InAs/InAlGaAs quantum-dash lasers on InP substrate after being subjected to the postgrowth intermixing process. The intermixing was achieved using dielectric capping process that involves the deposition of dielectric film and subsequent rapid thermal annealing. Compared to the un-intermixed laser, we found that the intermixed lasers with a 93 nm bandgap blue-shift exhibit good material quality with improved differential gain and comparable alpha factor.

Original languageEnglish (US)
Title of host publication2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 - Singapore, Singapore
Duration: Dec 8 2008Dec 11 2008

Publication series

Name2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Other

Other2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
CountrySingapore
CitySingapore
Period12/8/0812/11/08

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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