Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Ali H. Hassan, Mrinal Kanti Hota, Fwzah Hamud Alshammari, Husam N. Alshareef, Khaled N. Salama

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Using one binary oxide, a fully transparent thin-film transistor (TFT)-based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.
Original languageEnglish (US)
Pages (from-to)1901083
JournalAdvanced Electronic Materials
StatePublished - Feb 3 2020


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