Formation of polymers in TMGa/NH3/H2 system under GaN growth

Akira Hirako*, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We report analysis of gas-phase chemistry and the generation pathways of polymers in a horizontal reactor under metalorganic vapor-phase epitaxy of GaN films by using computational fluid dynamics simulations. The simulation model considered radiative heat transfer and the reaction model of TMGa/NH 3/H2 system, including the formation of polymers such as [Ga-N]n and [MMGaNH]n (n=2-6). It was found that Ga-N polymers are generated at a temperature region about 700 K, and that the temperature is the boundary between [Ga-N]2 dissociation ([Ga-N] 2→Ga-N) and Ga-N polymerization (such as [Ga-N] 2→[Ga-N]3-6).

Original languageEnglish (US)
Pages (from-to)428-432
Number of pages5
JournalJournal of Crystal Growth
Volume289
Issue number2
DOIs
StatePublished - Apr 1 2006

Keywords

  • A1. Computer simulation
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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