Formation of long-range stripe patterns with sub-10-nm half-pitch from directed self-assembly of block copolymer

Mikihito Takenaka*, Shusuke Aburaya, Satoshi Akasaka, Hirokazu Hasegawa, Nikolaos Hadjichristidis, George Sakellariou, Yasuhiko Tada, Hiroshi Yoshida

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We have demonstrated directed self-assembly of poly(styrene-b- dimethylsiloxiane) (PS-b-PDMS) down to sub-10-nm half-pitch by using grating Si substrate coated with PDMS. The strong segregation between PS and PDMS enables us to direct the self-assembly in wide grooves of the grating substrate up to 500 nm in width. This process can be applied to form various type of sub-10-nm stripe pattern along variety of grating shape.

Original languageEnglish (US)
Pages (from-to)2297-2301
Number of pages5
JournalJournal of Polymer Science, Part B: Polymer Physics
Volume48
Issue number22
DOIs
StatePublished - Nov 15 2010

Keywords

  • block copolymers
  • directed self-assembly
  • thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Polymers and Plastics
  • Materials Chemistry

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