Formation mechanism of cellular structures during unidirectional growth of binary semiconductor Si-rich SiGe materials

Raira Gotoh, Kozo Fujiwara*, Xinbo Yang, Haruhiko Koizumi, Jun Nozawa, Satoshi Uda

*Corresponding author for this work

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The formation mechanism of a cellular structure during the growth of Si-rich SiGe crystals was studied by in situ observation. We directly observed the morphological transformation of the crystal-melt interface during the unidirectional growth of Si-rich SiGe. It was found that the morphology of the interface transformed from a planar to a zigzag facets to a faceted cellular interface with increasing growth rate. It is clarified that Ge segregation at valleys of zigzag facets leads to the formation of a cellular structure in Si-rich SiGe crystals.

Original languageEnglish (US)
Article number021903
JournalApplied Physics Letters
Issue number2
StatePublished - Jan 9 2012
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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