Focused-ion-beam-deposited Pt contacts on ZnO nanowires

J. H. He, P. H. Chang, C. Y. Chen, K. T. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2×10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.

Original languageEnglish (US)
Title of host publicationECS Transactions - One-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting
Pages13-20
Number of pages8
Volume16
Edition33
DOIs
StatePublished - 2009
Externally publishedYes
EventOne-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 12 2008Oct 17 2008

Other

OtherOne-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/12/0810/17/08

ASJC Scopus subject areas

  • Engineering(all)

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