Flexible, simplified CMOS on Si(110) with metal gate / high κ for HP and LSTP

H. R. Harris, S. E. Thompson, S. Krishnan, P. Kirsch, P. Majhi, C. E. Smith, Muhammad Mustafa Hussain, G. Sun, H. Adhikari, S. Suthram, B. H. Lee, H. H. Tseng, R. Jammy

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

We examine and demonstrate the benefit of high κ and metal gate on Si(110) orientation-only CMOS devices and demonstrate not only good PMOS but competitive NMOS device performance. It is shown that high k / metal gates on NMOS Si(110) surface have higher than expected performance due to velocity saturation of minority carriers. Improvement in source/drain extension results in nearly symmetric CMOS output characteristics with no stress enhancement. Examining potential circuit impact reveals that the Si(110) surface provides a significant improvement in performance for HP and LSTP without large process complexity associated with mixed orientation CMOS approaches.

Original languageEnglish (US)
Article number4418862
Pages (from-to)57-60
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - Dec 1 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: Dec 10 2007Dec 12 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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