Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Galo T. Sevilla, Jhonathan Prieto Rojas, Hossain M. Fahad, Aftab M. Hussain, Rawan Ghanem, Casey Smith, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)2794-2799
Number of pages6
JournalAdvanced Materials
Volume26
Issue number18
DOIs
StatePublished - Feb 22 2014

ASJC Scopus subject areas

  • Mechanics of Materials
  • Materials Science(all)
  • Mechanical Engineering

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