First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Mohammed Abdul Majid, Ahmad Al-Jabr, Rami T. Elafandy, Hassan M. Oubei, Mohd Sharizal Alias, Bayan A. Alnahhas, Dalaver H. Anjum, Tien Khee Ng, Mohamed Shehata, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Original languageEnglish (US)
Title of host publicationNovel In-Plane Semiconductor Lasers XV
PublisherSPIE-Intl Soc Optical Eng
ISBN (Print)9781510600027
DOIs
StatePublished - Mar 7 2016

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