First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

Mohammed Abdul Majid, Ahmad Al-Jabr, Hassan M. Oubei, Mohd Sharizal Alias, Tien Khee Ng, Dalaver H. Anjum, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.
Original languageEnglish (US)
Title of host publication2015 IEEE Photonics Conference (IPC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages575-576
Number of pages2
ISBN (Print)9781479974658
DOIs
StatePublished - Nov 12 2015

Fingerprint Dive into the research topics of 'First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode'. Together they form a unique fingerprint.

Cite this