Film morphology and thin film transistor performance of solution-processed oligothiophenes

Paul C. Chang, Josephine Lee, Daniel Huang, Vivek Subramanian*, Amanda R. Murphy, Jean Frechet

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

85 Scopus citations

Abstract

The relationship between film morphology and thin film transistor (TFT) performance was investigated for two symmetrical α,ω-substituted sexithiophene derivatives containing thermally removable solubilizing groups. Solution deposition methods such as spin-coating, dip-casting, and inkjet-printing were optimized for solvent and annealing temperatures, and several substrate surface treatments were explored. The resulting thin films were characterized with AFM and the observed semiconductor performance was found to correlate with the morphology of the films, with the most crystalline films exhibiting the highest performance. Devices showed overall mobilities as high as 0.07 cm2/V s with on/off ratios > 108, which are among the highest reported values for oligothiophenes solution cast at room temperature.

Original languageEnglish (US)
Pages (from-to)4783-4789
Number of pages7
JournalChemistry of Materials
Volume16
Issue number23
DOIs
StatePublished - Nov 16 2004

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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