Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

Changhwa Lee, Seokwoo Lee, Seung S Lee

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.
Original languageEnglish (US)
Pages (from-to)1128-1131
Number of pages4
JournalNanoscale Research Letters
Volume5
Issue number7
DOIs
StatePublished - Apr 29 2010
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was partly supported by Brain Korea 21 and Award No KUK-F1-038-02, made by King Abdullah University of Science and Technology (KAUST).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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