Field-effect passivation on silicon nanowire solar cells

Anna Dalmau Mallorquí, Esther Alarcón-Lladó, Ignasi Canales Mundet, Amirreza Kiani, Bénédicte Demaurex, Stefaan De Wolf, Andreas Menzel, Margrit Zacharias, Anna Fontcuberta i Morral*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.

Original languageEnglish (US)
Pages (from-to)673-681
Number of pages9
JournalNano Research
Volume8
Issue number2
DOIs
StatePublished - Jan 1 2015

Keywords

  • field-effect
  • nanowire
  • passivation
  • solar cell
  • surface recombination

ASJC Scopus subject areas

  • Materials Science(all)
  • Electrical and Electronic Engineering

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