Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting

Chi Xu, Mao Wang, Xiaodong Zhang, Ye Yuan, Shengqiang Zhou

Research output: Contribution to journalArticlepeer-review

Abstract

In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.
Original languageEnglish (US)
Pages (from-to)31-35
Number of pages5
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume442
DOIs
StatePublished - Jan 17 2019

Fingerprint Dive into the research topics of 'Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting'. Together they form a unique fingerprint.

Cite this