In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.
|Original language||English (US)|
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms|
|State||Published - Jan 17 2019|