Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

L. Liao, H. J. Fan, B. Yan, Z. Zhang, L. L. Chen, B. S. Li, G. Z. Xing, Z. X. Shen, Tao Wu, X. W. Sun, J. Wang, T. Yu*

*Corresponding author for this work

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