Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

L. Liao, H. J. Fan, B. Yan, Z. Zhang, L. L. Chen, B. S. Li, G. Z. Xing, Z. X. Shen, Tao Wu, X. W. Sun, J. Wang, T. Yu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

79 Scopus citations

Abstract

We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr 0.3Ti 0.7)O 3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO 2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).

Original languageEnglish (US)
Pages (from-to)700-706
Number of pages7
JournalACS Nano
Volume3
Issue number3
DOIs
StatePublished - Mar 24 2009

Keywords

  • Depletion
  • Ferroelectric
  • Field effect transistor
  • Nanowires
  • Nonvolatile memory
  • PZT
  • ZnO

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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