Fatigue and retention of pb(zr0.53ti0.4,)03 thin film capacitors with pt and ruo, electrodes

Husam Niman Alshareef, K. R. Bellur, O. Auciello, A. I. Kingon

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Ph(Zr0.53 Ti0.47)O3 (PZT) thin films were deposited on Pt and RuO, coated Si and MgO substrates using the sol-gel process. Fatigue and retention tests were performed on these samples. The films grown on RuO, electrodes are fatigue-free up to nearly 10″ cycles. Their retention lifetime extrapolates to more than 10″’ seconds. The fatigue behavior of films grown on Pt electrodes depends on the PZT film orientation. Highly oriented (001) PZT films maintain 50% of their initial Pr-P″r value after 10″ cycles. The randomly oriented films maintain less than 3% of the initial P'r-P″r value after 10″ cycles. However. the retention lifetime of both highly oriented and randomly oriented PZT films grown on Pt electrodes extrapolates to higher than 10″ seconds. It appears that fatigue of films grown on RuO, IS mainly controlled by the filmlelectrode interface. On the other hand, fatigue of films grown on Pt appears to depend on both the film/electrode interface as well as on bulk effects.

Original languageEnglish (US)
Pages (from-to)185-196
Number of pages12
JournalIntegrated Ferroelectrics
Volume5
Issue number3
DOIs
StatePublished - Nov 1 1994

Keywords

  • Fatigue
  • ferroelectric
  • nonvolatile memory

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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