Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

Pang Shiuan Liu, Chang Hsiao Chen, Wei Ting Hsu, Chih Pin Lin, Tzu Ping Lin, Li Jen Chi, Chao Yuan Chang, Shih Chieh Wu, Wen Hao Chang, Lain-Jong Li, Tuo Hung Hou

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.

Original languageEnglish (US)
Article number7046992
Pages (from-to)5.7.1-5.7.4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Volume2015-February
Issue numberFebruary
DOIs
StatePublished - Feb 20 2015
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: Dec 15 2014Dec 17 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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