Failure analysis of NSOP problem due to Al fluoride oxide on microchip Al bondpads

Siping Zhao*, Younan Hua, Rao Ramesh, Kun Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

A NSOP due to Al fluoride oxide case was investigated. The NSOP problem on microchip Al bondpads was reported. SEM, EDX, TEM and Auger FA techniques were used to identify the root cause. Optical inspection did not show any abnormality, however, high magnification SEM inspection found the "white dof"-like defects. TEM and Auger analysis results showed that a thicker oxide layer on bondpads, which was about 200-300 A. After studies on failure mechanism, it was concluded that the thicker layer detected by TEM was not Al oxide layer (Al2O3), but it was Al fluoride oxide- Al xOyFz. which was due to F contamination during polyimide ashing process. In this paper we will further discuss the failure mechanism proposed and explain the formation of the Al fluoride oxide-Al xOyFz In this paper, the possible root cause and eliminating solution are also studied. After changing a new dedicated ashing process machine, the F contamination was eliminated.

Original languageEnglish (US)
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages970-976
Number of pages7
DOIs
StatePublished - Dec 1 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: Nov 29 2006Dec 1 2006

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period11/29/0612/1/06

ASJC Scopus subject areas

  • Engineering(all)

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