The present paper reports on the demonstration of wide optical bandwidth electro-absorption waveguide modulator arrays fabricated on a single InGaAs/InGaAsP wafer chip using a gray-mask-based quantum well intermixing. Both micro-Raman and photoluminescence measurements have shown that the quality of the material concerning is maintained after the ion implantation-induced process. Multiple energy bandgap sections for absorbing at different wavelengths with a large modulation depth have been achieved in modulator arrays, with around 60 nm as the modulating bandwidth. An intensity modulation depth of about -16 dB has been obtained at -5 V bias for these modulator arrays.
- Modulator arrays
- Quantum well intermixing
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering