Fabrication of wide-band electro-absorption waveguide modulator arrays using quantum well-intermixing process

S. L. Ng, H. S. Djie*, H. S. Lim, Y. L. Lam, Y. C. Chan, B. S. Ooi, V. Aimez, J. Beauvais, J. Beerens

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The present paper reports on the demonstration of wide optical bandwidth electro-absorption waveguide modulator arrays fabricated on a single InGaAs/InGaAsP wafer chip using a gray-mask-based quantum well intermixing. Both micro-Raman and photoluminescence measurements have shown that the quality of the material concerning is maintained after the ion implantation-induced process. Multiple energy bandgap sections for absorbing at different wavelengths with a large modulation depth have been achieved in modulator arrays, with around 60 nm as the modulating bandwidth. An intensity modulation depth of about -16 dB has been obtained at -5 V bias for these modulator arrays.

Original languageEnglish (US)
Pages (from-to)191-197
Number of pages7
JournalOptics Communications
Volume226
Issue number1-6
DOIs
StatePublished - Oct 15 2003
Externally publishedYes

Keywords

  • Electro-absorption
  • Gray-mask
  • Modulator arrays
  • Quantum well intermixing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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