Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

Baoyu Zong, J. Y. Goh, Zaibing Guo, Ping Luo, Chenchen Wang, Jinjun Qiu, Pin Ho, Yunjie Chen, Mingsheng Zhang, Guchang Han

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half-pitch without alignment issues. Depending on the different dry-etch mechanisms in transferring high and low density nanopatterns, suitable dry-etch angles and methods are studied for the transfer of high density nanopatterns. Some novel process methods have also been developed to eliminate the sidewall and other conversion obstacles for obtaining high density of uniform metallic nanopatterns. With these methods, ultrahigh density trilayer crossbar devices (∼2 × 1010 bit cm-2-kilobit electronic memory), which are composed of built-in practical magnetoresistive nanocells, have been achieved. This scalable process that we have developed provides the relevant industries with a cheap means to commercially fabricate three-dimensional high density metal-cell-metal nanodevices. © 2013 IOP Publishing Ltd.
Original languageEnglish (US)
Pages (from-to)245303
JournalNanotechnology
Volume24
Issue number24
DOIs
StatePublished - May 20 2013

ASJC Scopus subject areas

  • Bioengineering
  • Mechanics of Materials
  • Materials Science(all)
  • Chemistry(all)
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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