We fabricated stretchable molybdenum disulfide thin-film transistors (MoS 2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm 2 /(V·s) and an on/off current ratio of 10 4 with a notably low threshold voltage (∼1 V). Furthermore, our MoS 2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS 2 films for stretchable electronics.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)