Fabrication of stretchable MoS 2 thin-film transistors using elastic ion-gel gate dielectrics

Jiang Pu, Yijin Zhang, Yoshifumi Wada, Jacob Tse-Wei Wang, Lain-Jong Li, Yoshihiro Iwasa, Taishi Takenobu

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72 Scopus citations


We fabricated stretchable molybdenum disulfide thin-film transistors (MoS 2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm 2 /(V·s) and an on/off current ratio of 10 4 with a notably low threshold voltage (∼1 V). Furthermore, our MoS 2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS 2 films for stretchable electronics.

Original languageEnglish (US)
Article number023505
JournalApplied Physics Letters
Issue number2
StatePublished - Jul 8 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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