Fabrication of silicon nanowires field effect transistors for biosensor applications

Shi Ya Hsu*, Chia Chang Tsai, Wen Ti Hsu, Fu Peng Lu, Jr-Hau He, Kuang Hung Cheng, Shu Chen Hsieh, Hay Yan Wang, Ying Sun, Li Wei Tu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We use microelectronic techniques to fabricate silicon nanowires field effect transistors (SiNWs-FET). The source-drain current versus the voltage curve shows that the contact pad and the silicon nanowire form an ohmic contact. 3-aminopropyltriethoxysilane (APTES) is used as interfacing molecules, and assembly of these molecules is essential in surface modification technologies. Then we modified biotin on SiNWs-FET to detect streptavidin. For SiNWs-FET, variation in molecular charge is reflected in a change in the wire current. The response of the drain-source current of biotin-modified SiNWs-FET to changes in streptavidin concentration was measured by using a lock-in technique. Control experiment was carried out before biotin modified, and the SiNWs-FET did not exhibit a current change when 10 -7 M streptavidin passed through the microfluidic channel. This demonstrates that the APTES does not react to streptavidin. And in the present concentration-dependent real-time measurement of biotin modified SiNWs-FET, the detection limit of streptavidin is 10 -8 M.

Original languageEnglish (US)
Title of host publication2012 38th Annual Northeast Bioengineering Conference, NEBEC 2012
Pages5-6
Number of pages2
DOIs
StatePublished - Jun 29 2012
Event38th Annual Northeast Bioengineering Conference, NEBEC 2012 - Philadelphia, PA, United States
Duration: Mar 16 2012Mar 18 2012

Publication series

Name2012 38th Annual Northeast Bioengineering Conference, NEBEC 2012

Other

Other38th Annual Northeast Bioengineering Conference, NEBEC 2012
CountryUnited States
CityPhiladelphia, PA
Period03/16/1203/18/12

ASJC Scopus subject areas

  • Bioengineering

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