Fabrication of multiple-wavelength lasers in InGaAs-InGaAsP structures using direct laser writing

T. K. Ong*, Y. C. Chan, Boon Ooi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this letter, we report the use of a direct laser writing technique to induce different degrees of intermixing in selected areas across a wafer. Four lasers with distinguishable lasing wavelengths ranging from 1480 to 1512 nm have been obtained from specific regions of a single chip intermixed using a Q-switched Nd:YAG laser with a wavelength of 1.064 μm, generating pulses of ∼8 ns, and a pulse repetition rate of 10 Hz. This process offers a simple and potentially low-cost approach for integrating multiple-wavelength lasers for wavelength-division-multiplexing applications.

Original languageEnglish (US)
Pages (from-to)1161-1163
Number of pages3
JournalIEEE Photonics Technology Letters
Volume13
Issue number11
DOIs
StatePublished - Nov 1 2001

Keywords

  • Multiple-wavelength lasers
  • Point defect
  • Quantum well
  • Quantum-well intermixing
  • Wavelength-division multiplexing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

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