Fabrication of Multiple Wavelength Lasers in GaAs-AIGaAs Structures Using a One-Step Spatially Controlled Quantum-Well Intermixing Technique

B. S. Ooi, S. G. Ayling, A. C. Bryce, J. H. Marsh

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

We have applied a new technique, based on impurity-free vacancy diffusion, to control the degree of intermixing across a wafer. Bandgap tuned lasers were fabricated using this technique. Five distinguishable lasing wavelengths were observed from five selected intermixed regions on a single chip. These lasers showed no significant change in transparency current, internal quantum efficiency or internal propagation loss, which indicates that the material quality was not degraded after intermixing.

Original languageEnglish (US)
Pages (from-to)944-946
Number of pages3
JournalIEEE Photonics Technology Letters
Volume7
Issue number9
DOIs
StatePublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Fabrication of Multiple Wavelength Lasers in GaAs-AIGaAs Structures Using a One-Step Spatially Controlled Quantum-Well Intermixing Technique'. Together they form a unique fingerprint.

Cite this