Fabrication of mesoscopic devices using atomic force macroscopic electric field induced oxidation

F. K. Lee, G. H. Wen, X. X. Zhang, O. K.C. Tsui*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Predesigned antidot arrays with feature sizes ∼70 nm (width) X 10 nm (height) were fabricated on various materials, including aluminum, titanium, and silicon using AFM electric field induced oxidation and the selective wet etching technique. In addition, a procedure devised to fabricate gold structures by using an Al/PMMA/SiOx trilayer was illustrated. Temperature dependence of electrical resistivity and Hall coefficient obtained at room temperature of an aluminum control sample exhibit good agreement with known results of aluminum in bulk. Furthermore, the temperature coefficient of the ρ-T data demonstrated a systematic decrease with decreasing metal fraction of the sample. Overall, measurement results illustrate reliability of the fabrication protocol developed for the sample and the contrast leads.

Original languageEnglish (US)
Pages (from-to)162-167
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number1 SPEC.
DOIs
StatePublished - Jan 2003
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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