Fabrication of dimension-tunable Si nanopillar arrays with antireflection and self-cleaning properties

Yi Ruei Lin, Jr-Hau He*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In the present work, the SWSs combining AR and enhanced hydrophobic effects was reported. A simple method, which combines sub-wavelength-scale monolayer spheres with a reactive ion etching process, to fabricate AR structures of Si nanorod arrays (NRAs) was used. Spectral reflectance measurements of Si substrates with NRA SWSs showed drastic reduction in reflection over a broad range of wavelengths and a wide range of angle of incidence, demonstrating its ability to broadband and omnidirectional antireflection. The reflectivity and the wettability as a function of diameter, height, of Si NWAs were discussed.

Original languageEnglish (US)
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages515-516
Number of pages2
DOIs
StatePublished - May 5 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: Jan 3 2010Jan 8 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period01/3/1001/8/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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