Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method

Jingqi Li*, Qing Zhang, Dajiang Yang, Jingze Tian

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

134 Scopus citations

Abstract

Single wall carbon nanotubes (SWNTs) suspended in isopropyl alcohol have been placed between two electrodes by AC dielectrophoresis method. The number of SWNTs bridging the two electrodes is controlled by SWNT concentration of the suspension and deposition time. Through selectively burning off the metallic SWNTs by current induced oxidation, the back-gate carbon nanotube field effect transistors (CNTFETs) with a channel current on-off ratio of up to 7×105 have been successfully fabricated. The success rate of the CNTFETs in 20 samples is 60%. These results suggest that AC dielectrophoresis placement method is an efficient technique to fabricate CNTFETs with some flexibilities of controlling CNT reconnection, length and orientation.

Original languageEnglish (US)
Pages (from-to)2263-2267
Number of pages5
JournalCarbon
Volume42
Issue number11
DOIs
StatePublished - 2004
Externally publishedYes

Keywords

  • A. Carbon nanotubes
  • C. Atomic force microscopy
  • D. Electrical (electronic) properties

ASJC Scopus subject areas

  • Materials Chemistry

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