We report the enhancement of light extraction efficiency of InGaN-based blue light emitting diodes by using a surface light-scattering layer. A number of SiO2 microspheres embedded into a ZrO2 thin layer played a role of a light-scattering medium. Coating the light-scattering layer on device surface, the interference fringes of electroluminescence (EL) spectra were eliminated and the EL intensity around 440-450 nm was increased by a factor of 1.3.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - 2007|
ASJC Scopus subject areas
- Condensed Matter Physics