Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks

E. M A Fuentes-Fernandez, W. Debray-Mechtaly, Manuel Angel Quevedo Quevedo-López, Bruce E. Gnade, Arvindh Rajasekaran, Abhiman Hande, Pradeep Shah, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.
Original languageEnglish (US)
Pages (from-to)85-91
Number of pages7
JournalJournal of Electronic Materials
Volume40
Issue number1
DOIs
StatePublished - Nov 18 2010

ASJC Scopus subject areas

  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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