Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

Israel I. Mejia, Ana L. Salas Villaseñor, Dong Kyu Cha, Husam N. Alshareef, Bruce E. Gnade, Manuel Angel Quevedo Quevedo-López

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.
Original languageEnglish (US)
Pages (from-to)327-332
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - Jan 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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