Extrinsic doping in silicon revisited

Udo Schwingenschlögl, Alexander Chroneos, R. W. Grimes, Cosima Schuster

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.
Original languageEnglish (US)
Pages (from-to)242107
JournalApplied Physics Letters
Volume96
Issue number24
DOIs
StatePublished - Jun 18 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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