Extremely wide lasing bandwidth from InAs/InP quantum-dash ridge-waveguide laser near 1.6 μm

M. Z M Khan, Tien K. Ng, C. S. Lee, P. Bhattacharya, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate an ultra-broad lasing bandwidth (-3dB) of > 50 nm utilizing InAs/InGaAlAs/InP quantum-dash ridge-waveguide laser using chirped AlGaInAs barrier layer thickness. Our device exhibits a recorded bandwidth and significant improvement of laser characteristics.

Original languageEnglish (US)
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
StatePublished - 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period06/9/1306/14/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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