Extreme temperature 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

Wei Cheng Lien*, Albert P. Pisano, Dung Sheng Tsai, Jr-Hau He, Debbie G. Senesky

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325 nm illumination is 0.116 A/W at a 20 V bias at room temperature. The photo-to-dark current ratio of SiC MSM PDs is as high as 1.3×105 at 25°C and is 22 at 400°C. The rise time of PDs is increased slightly from 594 μs to 684 μs from room temperature to 400°C. These results support the use of 4H-SiC thin films photodetectors in extreme high-temperature applications.

Original languageEnglish (US)
Title of host publication2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages234-237
Number of pages4
DOIs
StatePublished - Dec 11 2012
Event42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
Duration: Sep 17 2012Sep 21 2012

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other42nd European Solid-State Device Research Conference, ESSDERC 2012
CountryFrance
CityBordeaux
Period09/17/1209/21/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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