Extraordinary Hall effect in (Ni80Fe20) x(SiO2)1-x thin films

Hui Liu, Fuk Kay Lee, Rong Kun Zheng, Xixiang Zhang, Ophelia K.C. Tsui*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The extraordinary Hall effect (EHE) in ferromagnetic samples is generally attributed to scatterings of iterant electrons in the presence of spin-orbit interactions. In this work, our study of the thickness dependence of the EHE in the (Ni80Fe20)x(SiO2)1-x system showed the spontaneous Hall resistivity, ρxyS to be quite independent of the film thickness while the Hall coefficient, R s (≡ρxyS/MS, where M S is the saturated magnetization), increased monotonically owing to a depression in MS. We point out that the independence of ρxyS with reducing thickness could arise if the morphological structure of the sample becomes two dimensional with decreasing film thickness, which is expected from classical percolation theory. We also find in the (Ni80Fe20)x(SiO2) 1-x system (with varying x) that ρxyS ρxxγ where γ=0.53, which disagrees with the value of 2 frequently attributed to the side jump effect, but which can be explained in terms of the more general form ρ xySxxΔye/ ΛSO, where Δye is the side jump displacement and ΛSO is the spin-orbit mean free path.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number22
DOIs
StatePublished - Dec 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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