We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ∼20 times higher injection levels (∼275 A/cm2) compared to a conventional step-MQWs microLED (∼14 A/cm2).
|Original language||English (US)|
|Title of host publication||2014 IEEE Photonics Conference|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||2|
|State||Published - Dec 2014|