Exposure of thick polymethylglutarimide films for structural MEMS

Ian Grant Foulds*, R. W. Johnstone, S. H. Tsang, M. Parameswaran

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Polymethylglutarimide (PMGI) based resists are commercially available resists intended for use in bilayer lift-off applications. Literature on exposure and development of PMGI films is restricted to films less than 2.5μm in thickness, and limited to using tetramethylammonium hydroxide (TMAH) based developers. This paper investigates the exposure and development of PMGI thick films greater than 6μm in thickness using both TMAH and tetraethylammonium hydroxide (TEAM) based developers. At this thickness, the absorption of the PMGI leads to non-uniform doses through the film, and so creates large gradients in the dissolution properties. Etch rates as a function of surface dose and development time are reported in this paper. copyright The Electrochemical Society.

Original languageEnglish (US)
Pages (from-to)299-306
Number of pages8
JournalECS Transactions
Volume3
Issue number10
DOIs
StatePublished - Dec 1 2006
EventChemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006

ASJC Scopus subject areas

  • Engineering(all)

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