Exposure and development of poly (methyl methacrylate) using 254nm light source and IPA/water

Robert W. Johnstone, Ian Grant Foulds, M. Parameswaran

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Polymethyl methacrylate (PMMA) is a transparent thermoplastic with important applications as a positive resist for various radiation sources. For photo-patterning, PMMA is used with wavelengths shorter than 250nm, as that is the commonly accepted upper limit of effectiveness. However, we have shown patterning of non-amplified PMMA films at 254nm. Data for the etch depth as a function of dose (0 to 10 hours), developer temperature (20°C to 30°C), and etch time was collected. Developer speeds of up several microns a minute are possible, and the selectivity of exposed over unexposed PMMA can reach nearly 650. This demonstrates the feasibility of PMMA exposure using deep UV at 254nm.

Original languageEnglish (US)
Title of host publication2007 Canadian Conference on Electrical and Computer Engineering, CCECD
Pages1668-1670
Number of pages3
DOIs
StatePublished - Dec 1 2007
Event2007 Canadian Conference on Electrical and Computer Engineering, CCECD - Vancouver, BC, Canada
Duration: Apr 22 2007Apr 26 2007

Publication series

NameCanadian Conference on Electrical and Computer Engineering
ISSN (Print)0840-7789

Other

Other2007 Canadian Conference on Electrical and Computer Engineering, CCECD
CountryCanada
CityVancouver, BC
Period04/22/0704/26/07

Keywords

  • 254nm light source
  • DUV patterning
  • PMMA
  • Polymethyl methacrylate

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

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