Exploring the energy landscape of resistive switching in antiferromagnetic Sr3Ir2O7

Morgan Williamson, Shida Shen, Gang Cao, Jianshi Zhou, John B. Goodenough, Maxim Tsoi

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We study the resistive switching triggered by an applied electrical bias in the antiferromagnetic Mott insulator Sr3Ir2O7. The switching was previously associated with an electric-field-driven structural transition. Here we use time-resolved measurements to probe the thermal activation behavior of the switching process and acquire information about the energy barrier associated with the transition. We quantify the changes in the energy-barrier height with respect to the applied bias and find a linear decrease of the barrier with increasing bias. Our observations support the potential of antiferromagnetic transition-metal oxides for spintronic applications.
Original languageEnglish (US)
JournalPhysical Review B
Volume97
Issue number13
DOIs
StatePublished - Apr 27 2018
Externally publishedYes

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